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| PLASTIC INFRARED LIGHT EMITTING DIODE QED123UL PACKAGE DIMENSIONS 0.195 (4.95) REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) SCHEMATIC ANODE NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. CATHODE FEATURES * * * * * * * * UL217 Approved = 880 nm Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched Photosensor: QSB34 Narrow Emission Angle, 18 High Output Power Package material and color: Clear, peach (c) 2004 Fairchild Semiconductor Corporation Page 1 of 4 4/2/04 PLASTIC INFRARED LIGHT EMITTING DIODE QED123UL ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 100 5 200 Unit C C C C mA V mW NOTES: 1. Derate power dissipation linearly 2.67 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing . ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25C) Parameter Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QED121 Rise Time Fall Time Test Conditions IF = 20 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA Symbol PE 21/2 VF IR IE tr tf Min -- -- -- -- 16 -- -- Typ 880 18 -- -- -- 800 800 Max -- -- 1.7 10 40 -- -- Units nm Deg. V A mW/sr ns ns (c) 2004 Fairchild Semiconductor Corporation Page 2 of 4 4/2/04 PLASTIC INFRARED LIGHT EMITTING DIODE QED123UL Typical Performance Characteristics NORMALIZED COLLECTOR CURRENT 10 1 IF = 100 mA Normalized to: Pulse Width = 100 s Duty Cycle = 0.1% VCC = 5 V RL = 100 TA = 25C NORMALIZED RADIANT INTENSITY Normalized to: IF= 100 mA, TA = 25C Pulse Width = 100 s 1 0.8 0.6 IF = 20 mA 0.1 0.4 0.01 0.2 0.001 1 10 100 1000 0 0 1 2 3 4 5 6 IF - INPUT CURRENT (mA) LENS TIP SEPERATION (INCHES) Fig. 1 Normalized Radiant Intensity vs. Input Current Fig. 2 Coupling Characteristics of QED12X and QSD12X 1.0 2.5 NORMALIZED RADIANT INTENSITY 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VF - FORWARD VOLTAGE (V) IF = 50 mA 2 IF = 100 mA 1.5 1 IF = 10 mA Pulse Width = 100 s Duty Cycle = 0.1% IF = 20 mA 0.5 0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 775 800 825 850 875 900 925 950 TA - TEMPERATURE (C) (nm) Fig. 3 Forward Voltage vs. Temperature Fig. 4 Normalized Radiant Intensity vs. Wavelength Fig. 5 Radiation Pattern 20 30 40 50 60 70 80 90 100 80 60 40 20 0 20 40 60 80 100 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 (c) 2004 Fairchild Semiconductor Corporation Page 3 of 4 4/2/04 PLASTIC INFRARED LIGHT EMITTING DIODE QED123UL DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2004 Fairchild Semiconductor Corporation Page 4 of 4 4/2/04 |
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